Based on a single-level-cell (SLC) NAND flash design, the new high-density OneNAND addresses the requirement for more code information storage in smartphones, a trend being driven by the increasing use of diverse application software program and larger amounts of multimedia software. The high-density OneNAND memory is now sampling with volume production scheduled by the end of this month.

The 8Gb OneNAND features the reliability of a SLC style and the proven efficiency of OneNAND, which reads data at 70 megabytes per second (MB/s), more than four times the speed of conventional NAND (17MB/s). These characteristics and a low-voltage design make it a particularly attractive answer for handling the growing amount of code data utilized with touch screens and other high resolution smartphone features. In addition, by applying advanced 30nm-class process technology, Samsung is able to raise productivity by 40 percent over its previous 40nm-class* style.

Since 2004, Samsung has expanded the adoption of its OneNAND like a high-performance answer that may be applied to handset applications without having to develop separate software program program.

OneNAND memory can be utilized as buffer memory not only for ‘writes’ within the system – thanks to its faster-than-NAND ‘write’ speeds, but also as a buffer for faster, high-performing ‘read’ operations thank to its NOR flash interface.

According to marketplace research firm, iSuppli, the demand for embedded NAND flash in mobile handsets is expected to achieve 1.1 billion units (one gigabyte equivalents) in 2010 and a lot more than doubling to 2.5 billion, 1GB equivalent, units in 2011. Moreover, the Strategic Analysis firm forecasts that demand for smartphones will reach 285 million units in 2010 and grow to 580 million units in 2013.